Main Article Content
Plasma sputtering was used to deposit a layer of carbon from graphite with thicknesses (20 , 54, 63 nm) on a p-type silicon wafer substrates to prepare Si-CNT (Silicon â€“ Carbon Nano Tubes ) junction without any catalyst . It is found that the I-V characteristics of the junction were similar to the diode properties, which gave confirmation that the carbon layer or in other words that carbon nanotubes behaved as an n-type semiconductor. The effect of heat and illumination with light on the I-V characteristics is studied . at different temperature (32 , 40 , 50 and 60 o C) , the I-V characteristics shows clear effect and increase of conductivity with increasing of temperature for certain thickness . Also studied the effect of light on the I-V characteristics show an increase in the flowing current , the effect of both heat and illumination with light are more pronounced for low thickness of the CNT layer .
chemical vapor deposition method", Journal of optoelectronics and advanced materials - symposia, Vol. 1, No. 3, p. 281 â€“ 284.
Costa S., E. Borowiak-palen, M. KruszyÅ„ska, A. Bachmatiuk, R. and KaleÅ„czuk , J. (2008) " Characterization of carbon nanotubes by Raman spectroscopy", Materials Science-Poland, Vol. 26, No. 2,pp.433-441.
Fedawy,, Mostafa Fikry, Wael Alhenawy, Adel and Hazem Hassan (2012) "I-V characteristics model for ballistic Single Wall Carbon Nanotube Field Effect Transistors (SW-CNTFET)", IEEE International Conference on Electronic Devices, Systems and Applications (ICEDSA).
Mahtani, Pratish (2010)" Optical and Structural Characterization of Amorphous Carbons Films", MSc. thesis, Department of Electrical and Computer Engineering University of Toronto.
Pierson, Hugh O. (1993) "Handbook of Carbon, Graphite, Diamond and Fullerenes", Park Ridge, New Jersey, U.S.A.
Saito R., (1998)" physical Properties of Carbon Nanotubes", Imperial College Press, 203 Electrical Engineering Building, Imperial College, London SW7 2BT.
Seshan, Krishna (2002) "handbook of thin-film deposition processes and techniques", second edition, William Andrew Publishing Norwich, New York, U.S.A., www.williamandrew.com, www.knovel.com.
Uchino, T. Shimpo, F. Kawashima, T. Ayre, G. N. Smith, D. C. de Groot, C. H. and Ashburn, P.
(2013) "Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes "APPLIED PHYSICS LETTERS 103, 193111
Uonis, Mohammad M. Mustafa, Bassam M. Ezzat, Anwar M. " The Role of Sputtering Current
on the Optical and Electrical
Properties of Si-C Junction", World Journal of Nano Science and Engineering, 2014, 4, 90-
Zhang, Jin Zhng (2009) "optical properties and spectroscopy of nanomaterials ", World Scientific Publishing Co. Pte. Ltd.5 Toh Tuck Link, Singapore 596224.